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Browsing by  AuthorJIWON, KIM

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Article
Threshold voltage variation depending on single grain boundary and stored charges in an adjacent cell for vertical silicon-oxide-nitride-oxide-silicon (SONOS) NAND flash memorySCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 57, no. 4S, 2018-04

Conference
Vth variation of string SONOS NAND Flash depending on single grain boundary and stored electron charges in an adjacent cell

International Conference on Solid State Devices and Materials (SSDM 2017), page. 793 - 794, 2017-09-21

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