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Showing results 1 to 5 of 5
Article
A Depletion-mode InP MOSFET with a Liquid Phase Oxidized InGaAs GateSCIE

COMPOUND SEMICONDUCTORS 2001, no. 170, page. 125 - 129, 2002-01

Conference
A Depletion-mode InP MOSFET with a Liquid Phase Oxidized InGaAs Gate

International Symposium on Compound Semiconductors 2001, 2001-10

Article
A two-step-recess process based on atomic-layer etching for high-performance In(0.52)Al(0.48)As/In(0-53)Ga(0.47)As p-HEMTsSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 55, no. 7, page. 1577 - 1584, 2008-07

Article
In0.5Ga0.5P/In0.22Ga0.78As Pseudomorphic High Electron Mobility Transistors with an Oxidized GaAs Gate for Improved Breakdown Voltage CharacteristicsSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 47, no. 2, page. 223 - 228, 2003-02

Article
Microwave Photonic Mixer Utilizing an InGaAs Photoconductor for Radio over Fiber ApplicationsSCIESCOPUS

IEICE TRANSACTIONS ON ELECTRONICS, vol. E90C, no. 2, page. 457 - 464, 2007-02

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