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Browsing by  AuthorOH, HYEON GWAN

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Showing results 1 to 8 of 8
Conference
Effect of Elliptical Channel Shape on Memory Characteristics of Vertical 3D NAND Flash Memory

한국반도체디스플레이기술학회 2018년 추계학술대회, 2018-11-22

Conference
Effect of Interface Roughness on Program/Erase Efficiency for 3D Vertical NAND Flash Memory applications

제27회 한국반도체학술대회, 2020-02

Conference
Effect of Interface Roughness on Program/Erase Efficiency for 3D Vertical NAND Flash Memory applications

한국반도체학술대회, 2020-02

Article
Effects of single grain boundary and random interface traps on electrical variations of sub-30 nm polysilicon nanowire structuresSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 149, page. 113 - 116, 2016-01-05

Conference
Scalability of OTS Integrated PCM for 3-D Stackable Cross-point Array Structure Using TCAD Simulation

the 17th International Nanotech Symposium & Exhibition, 2019-07-04

Conference
Scalability of OTS Integrated PCM for 3-D Stackable Cross-point Array Structure Using TCAD Simulation

the 17th International Nanotech Symposium & Exhibition, 2019-07-04

Article
Threshold voltage variation depending on single grain boundary and stored charges in an adjacent cell for vertical silicon-oxide-nitride-oxide-silicon (SONOS) NAND flash memorySCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 57, no. 4S, 2018-04

Conference
Vth variation of string SONOS NAND Flash depending on single grain boundary and stored electron charges in an adjacent cell

International Conference on Solid State Devices and Materials (SSDM 2017), page. 793 - 794, 2017-09-21

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