DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seyed Salehi, M. | - |
dc.contributor.author | Anjabin, N. | - |
dc.contributor.author | Kim, H.S. | - |
dc.date.accessioned | 2019-12-02T13:11:00Z | - |
dc.date.available | 2019-12-02T13:11:00Z | - |
dc.date.created | 2019-06-16 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.issn | 1431-9276 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/100105 | - |
dc.description.abstract | During recrystallization, the growth of fresh grains initiated within a deformed microstructure causes dramatic changes in the dislocation structure and density of a heavily deformed matrix. In this paper, the microstructure of a cold rolled and partially recrystallized Al-Mg alloy (AA5052) was studied via electron backscattered diffraction (EBSD) analysis. The structure and density of the geometrically necessary dislocations (GNDs) were predicted using a combination of continuum mechanics and dislocation theory. Accordingly, the Nye dislocation tensor, which determines the GND structure, was estimated by calculation of the lattice curvature. To do so, five components of the Nye dislocation tensor were directly calculated from the local orientation of surface points of the specimen, which was determined by two-dimensional EBSD. The remaining components of GNDs were determined by minimizing a normalized Hamiltonian equation based on dislocation energy. The results show the elimination of low angle boundaries, lattice curvature, and GNDs in recrystallized regions and the formation of low angle boundaries with orientation discontinuities in deformed grains, which may be due to static recovery. | - |
dc.language | English | - |
dc.publisher | CAMBRIDGE UNIV PRESS | - |
dc.relation.isPartOf | MICROSCOPY AND MICROANALYSIS | - |
dc.title | Study of Geometrically Necessary Dislocations of a Partially Recrystallized Aluminum Alloy Using 2D EBSD | - |
dc.type | Article | - |
dc.identifier.doi | 10.1017/S1431927619000382 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MICROSCOPY AND MICROANALYSIS, v.25, no.3, pp.656 - 663 | - |
dc.identifier.wosid | 000474798800009 | - |
dc.citation.endPage | 663 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 656 | - |
dc.citation.title | MICROSCOPY AND MICROANALYSIS | - |
dc.citation.volume | 25 | - |
dc.contributor.affiliatedAuthor | Kim, H.S. | - |
dc.identifier.scopusid | 2-s2.0-85064867344 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Electron backscatter diffraction | - |
dc.subject.keywordAuthor | geometrically necessary dislocations | - |
dc.subject.keywordAuthor | Nye dislocation tensor | - |
dc.subject.keywordAuthor | partially recrystallization | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Microscopy | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Microscopy | - |
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