DC Field | Value | Language |
---|---|---|
dc.contributor.author | KWON, JIMIN | - |
dc.contributor.author | JUNG, SUNGYEOP | - |
dc.contributor.author | KIM, YUN-HI | - |
dc.contributor.author | JUNG, SUNGJUNE | - |
dc.date.accessioned | 2019-12-02T14:10:03Z | - |
dc.date.available | 2019-12-02T14:10:03Z | - |
dc.date.created | 2019-07-11 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/100123 | - |
dc.description.abstract | This transaction proposes a symmetric bistaggered dual-gate organic thin-film transistor (TFT) to minimize the difference between the top and bottom channel current characteristics and demonstrates it through experiment and 2-D simulation. In dual-gate organic TFTs, asymmetric top and bottom channel currents are mainly a result of their asymmetric contact geometry. To address this geometric limitation, the contact electrodes were sandwiched between the two organic semiconductor layers to be placed in a staggered position to both top and bottom gates. Two-way current crowding at the bistaggered contact electrodes leads to high-charge injection efficiency in both channels. | - |
dc.language | English | - |
dc.publisher | INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.title | Bistaggered Contact Geometry for Symmetric Dual-Gate Organic TFTs | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TED.2019.2917013 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.7, pp.3118 - 3123 | - |
dc.identifier.wosid | 000472184900040 | - |
dc.citation.endPage | 3123 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 3118 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 66 | - |
dc.contributor.affiliatedAuthor | KWON, JIMIN | - |
dc.contributor.affiliatedAuthor | JUNG, SUNGYEOP | - |
dc.contributor.affiliatedAuthor | JUNG, SUNGJUNE | - |
dc.identifier.scopusid | 2-s2.0-85067615190 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | Contact resistance | - |
dc.subject.keywordPlus | Electrodes | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordPlus | Geometry | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | 2-D simulation | - |
dc.subject.keywordPlus | Contact electrodes | - |
dc.subject.keywordPlus | Contact geometry | - |
dc.subject.keywordPlus | Device geometries | - |
dc.subject.keywordPlus | Gate control | - |
dc.subject.keywordPlus | Injection efficiency | - |
dc.subject.keywordPlus | Organic thin film transistors | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordAuthor | 2-D simulation | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | device geometry | - |
dc.subject.keywordAuthor | independent gate control | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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