DC Field | Value | Language |
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dc.contributor.author | Usta, H. | - |
dc.contributor.author | Kim, D. | - |
dc.contributor.author | Ozdemir, R. | - |
dc.contributor.author | Zorlu, Y. | - |
dc.contributor.author | Kim, S. | - |
dc.contributor.author | Ruiz Delgado, M.C. | - |
dc.contributor.author | Harbuzaru, A. | - |
dc.contributor.author | Kim, S. | - |
dc.contributor.author | Demirel, G. | - |
dc.contributor.author | Hong, J. | - |
dc.contributor.author | Ha, Y.-G. | - |
dc.contributor.author | Cho, K. | - |
dc.contributor.author | Facchetti, A. | - |
dc.contributor.author | Kim, M.-G. | - |
dc.date.accessioned | 2019-12-04T08:10:20Z | - |
dc.date.available | 2019-12-04T08:10:20Z | - |
dc.date.created | 2019-07-25 | - |
dc.date.issued | 2019-07 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/100276 | - |
dc.description.abstract | The first example of an n-type [1]benzothieno[3,2-b][1]benzothiophene (BTBT)-based semiconductor, D-(PhFCO)-BTBT, has been realized via a two-step transition metal-free process without using chromatographic purification. Physicochemical and optoelectronic characterizations of the new semiconductor were performed in detail, and the crystal structure was accessed. The new molecule exhibits a large optical band gap (similar to 2.9 eV) and highly stabilized (Delta E-LUMO = 1.54 eV)/pi-delocalized lowest unoccupied molecular orbital (LUMO) mainly comprising the BTBT pi-core and in-plane carbonyl units. The effect of out-of-plane twisted (64 degrees) pentafluorophenyl groups on LUMO stabilization is found to be minimal. Polycrystalline D(PhFCO)-BTBT thin films prepared by physical vapor deposition exhibited large grains (similar to 2-5 mu m sizes) and "layer-by-layer" stacked edge-on oriented molecules with an in-plane herringbone packing (intermolecular distances similar to 3.25-3.46 angstrom) to favor two-dimensional (2D) source-to-drain (S -> D) charge transport. The corresponding TC/BG-OFET devices demonstrated high electron mobilities of up to similar to 0.6 cm(2)/V.s and I-on/I-off ratios over 10(7)-10(8). These results demonstrate that the large band gap BTBT pi-core is a promising candidate for high-mobility n-type organic semiconductors and, combination of very large intrinsic charge transport capabilities and optical transparency, may open a new perspective for next-generation unconventional (opto)electronics. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | CHEMISTRY OF MATERIALS | - |
dc.title | High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.chemmater.9b01614 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CHEMISTRY OF MATERIALS, v.31, no.14, pp.5254 - 5263 | - |
dc.identifier.wosid | 000477093000032 | - |
dc.citation.endPage | 5263 | - |
dc.citation.number | 14 | - |
dc.citation.startPage | 5254 | - |
dc.citation.title | CHEMISTRY OF MATERIALS | - |
dc.citation.volume | 31 | - |
dc.contributor.affiliatedAuthor | Kim, S. | - |
dc.contributor.affiliatedAuthor | Cho, K. | - |
dc.identifier.scopusid | 2-s2.0-85068446257 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | Chromatographic analysis | - |
dc.subject.keywordPlus | Crystal structure | - |
dc.subject.keywordPlus | Electron mobility | - |
dc.subject.keywordPlus | Energy gap | - |
dc.subject.keywordPlus | Molecular orbitals | - |
dc.subject.keywordPlus | Molecules | - |
dc.subject.keywordPlus | Physical vapor deposition | - |
dc.subject.keywordPlus | Thiophene | - |
dc.subject.keywordPlus | Transition metals | - |
dc.subject.keywordPlus | Chromatographic purification | - |
dc.subject.keywordPlus | High electron mobility | - |
dc.subject.keywordPlus | Intermolecular distance | - |
dc.subject.keywordPlus | Lowest unoccupied molecular orbital | - |
dc.subject.keywordPlus | N-type organic semiconductor | - |
dc.subject.keywordPlus | Optoelectronic characterization | - |
dc.subject.keywordPlus | Transport capabilities | - |
dc.subject.keywordPlus | Two Dimensional (2 D) | - |
dc.subject.keywordPlus | High electron mobility transistors | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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