Hall Effect in Polycrystalline Organic Semiconductors: The Effect of Grain Boundaries
SCIE
SCOPUS
- Title
- Hall Effect in Polycrystalline Organic Semiconductors: The Effect of Grain Boundaries
- Authors
- Choi, H.H.; Paterson, A.F.; Fusella, M.A.; Panidi, J.; Solomeshch, O.; Tessler, N.; Heeney, M.; Cho, K.; Anthopoulos, T.D.; Rand, B.P.; Podzorov, V.
- Date Issued
- 2019-07
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- Highly crystalline thin films in organic semiconductors are important for applications in high-performance organic optoelectronics. Here, the effect of grain boundaries on the Hall effect and charge transport properties of organic transistors based on two exemplary benchmark systems is elucidated: (1) solution-processed blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C-8-BTBT) small molecule and indacenodithiophene-benzothiadiazole (C16IDT-BT) conjugated polymer, and (2) large-area vacuum evaporated polycrystalline thin films of rubrene (C42H28). It is discovered that, despite the high field-effect mobilities of up to 6 cm(2) V-1 s(-1) and the evidence of a delocalized band-like charge transport, the Hall effect in polycrystalline organic transistors is systematically and significantly underdeveloped, with the carrier coherence factor alpha < 1 (i.e., yields an underestimated Hall mobility and an overestimated carrier density). A model based on capacitively charged grain boundaries explaining this unusual behavior is described. This work significantly advances the understanding of magneto-transport properties of organic semiconductor thin films.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/100277
- DOI
- 10.1002/adfm.201903617
- ISSN
- 1616-301X
- Article Type
- Article
- Citation
- ADVANCED FUNCTIONAL MATERIALS, 2019-07
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