DC Field | Value | Language |
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dc.contributor.author | Cho, Hyeonsu | - |
dc.contributor.author | KIM, KIHYUN | - |
dc.contributor.author | MEYYAPPAN, MEYYA | - |
dc.contributor.author | BAEK, CHANG KI | - |
dc.date.accessioned | 2019-12-04T15:50:50Z | - |
dc.date.available | 2019-12-04T15:50:50Z | - |
dc.date.created | 2019-12-04 | - |
dc.date.issued | 2019-01 | - |
dc.identifier.issn | 0925-4005 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/100324 | - |
dc.description.abstract | Electrolyte-insulator-semiconductor (EIS) sensor is commonly considered for chemical and biosensing applications due to its small size and simple fabrication method. Here, we demonstrate a fluoride-sensitive EIS sensor using thermally-deposited polycrystalline lanthanum fluoride (poly LaF3) film as sensing membrane, which is cheaper than single-crystal LaF3. The sensing characteristics are analyzed for poly LaF3 layers deposited at different temperatures, and the EIS sensors with the sensing membrane formed at 500 °C exhibit excellent sensing response to fluoride ions with a high sensitivity of 52.3 mV/pF and low limit of detection of 1.9 ppb. This limit of detection is lower than previously reported values in the literatures. In addition, the poly LaF3 film deposited at 500 °C has good stability with a low hysteresis voltage of 5.1 mV and a small drift rate of 0.67 mV/h. These superior metrics come from a rather well crystallized LaF3 structure including denser surface grains, enhanced preferential crystalline (002) plane, and improved stoichiometric composition. Furthermore, the sensors show a good selectivity over other ions such as NO3− and SO42−. | - |
dc.language | English | - |
dc.publisher | Elsevier BV | - |
dc.relation.isPartOf | Sensors and Actuators, B: Chemical | - |
dc.title | LaF3 electrolyte-insulator-semiconductor sensor for detecting fluoride ions | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.snb.2018.09.094 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Sensors and Actuators, B: Chemical, v.279, pp.183 - 188 | - |
dc.identifier.wosid | 000449373800023 | - |
dc.citation.endPage | 188 | - |
dc.citation.startPage | 183 | - |
dc.citation.title | Sensors and Actuators, B: Chemical | - |
dc.citation.volume | 279 | - |
dc.contributor.affiliatedAuthor | Cho, Hyeonsu | - |
dc.contributor.affiliatedAuthor | KIM, KIHYUN | - |
dc.contributor.affiliatedAuthor | MEYYAPPAN, MEYYA | - |
dc.contributor.affiliatedAuthor | BAEK, CHANG KI | - |
dc.identifier.scopusid | 2-s2.0-85054258765 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PH SENSORS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | IMPEDANCE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | ISFETS | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | DRIFT | - |
dc.subject.keywordAuthor | Fluoride ion sensor | - |
dc.subject.keywordAuthor | Electrolyte-insulator-semiconductor (EIS) | - |
dc.subject.keywordAuthor | Lanthanum fluoride (LaF3) | - |
dc.subject.keywordAuthor | Sensitivity | - |
dc.subject.keywordAuthor | Hysteresis | - |
dc.subject.keywordAuthor | Selectivity | - |
dc.subject.keywordAuthor | Temperature effect | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
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