Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals
SCIE
SCOPUS
- Title
- Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals
- Authors
- Argunova, TS; Gutkin, MY; Je, JH; Lim, JH; Mokhov, EN; Roenkov, AD
- Date Issued
- 2014-01
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- Using synchrotron X-ray topography and phase-contrast imaging, we investigated lattice defects in bulk SiC crystals grown by physical vapor transport in a free spreading condition. We find that polytype inclusions appearing at initial growth stage are overgrown by the matrix, making pores which are then transformed into micropipes with a low density of 10 cm(-2), in particular, in the lateral region. We propose that complex planar defects configured from dislocations and micropipes are transformed into slit pores via vacancy-diffusion and micropipes-attraction mechanisms. Our finding suggests that suppression of the nucleation of foreign polytype inclusions is a key approach for providing high quality free spreading SiC growth.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10080
- DOI
- 10.1039/C4CE01515K
- ISSN
- 1466-8033
- Article Type
- Article
- Citation
- CRYSTENGCOMM, vol. 16, no. 37, page. 8917 - 8923, 2014-01
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