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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Misha, SH | - |
| dc.contributor.author | Tamanna, N | - |
| dc.contributor.author | Woo, J | - |
| dc.contributor.author | Lee, S | - |
| dc.contributor.author | Song, J | - |
| dc.contributor.author | Park, J | - |
| dc.contributor.author | Lim, S | - |
| dc.contributor.author | Park, J | - |
| dc.contributor.author | Hwang, H | - |
| dc.date.accessioned | 2015-06-25T01:49:26Z | - |
| dc.date.available | 2015-06-25T01:49:26Z | - |
| dc.date.created | 2015-03-04 | - |
| dc.date.issued | 2015-01 | - |
| dc.identifier.issn | 2162-8742 | - |
| dc.identifier.other | 2015-OAK-0000032461 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10092 | - |
| dc.description.abstract | The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement. (C) The Author(s) 2015. Published by ECS. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | The Electrochemical Society | - |
| dc.relation.isPartOf | ECS Solid State Letters | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1149/2.0011504ssl | - |
| dc.author.google | Misha, SH | en_US |
| dc.author.google | Tamanna, N | en_US |
| dc.author.google | Hwang, H | en_US |
| dc.author.google | Lim, S | en_US |
| dc.author.google | Park, J | en_US |
| dc.author.google | Song, J | en_US |
| dc.author.google | Lee, S | en_US |
| dc.author.google | Woo, J | en_US |
| dc.relation.volume | 4 | en_US |
| dc.relation.issue | 3 | en_US |
| dc.relation.startpage | 25 | en_US |
| dc.relation.lastpage | 28 | en_US |
| dc.contributor.id | 10079928 | en_US |
| dc.relation.journal | ECS Solid State Letters | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | ECS Solid State Letters, v.4, no.3, pp.25 - 28 | - |
| dc.identifier.wosid | 000348423000006 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 28 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 25 | - |
| dc.citation.title | ECS Solid State Letters | - |
| dc.citation.volume | 4 | - |
| dc.contributor.affiliatedAuthor | Hwang, H | - |
| dc.identifier.scopusid | 2-s2.0-84923370616 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 7 | - |
| dc.type.docType | Article | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
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- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg