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Cited 24 time in webofscience Cited 25 time in scopus
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dc.contributor.authorLee, Seon Baek-
dc.contributor.authorKang, Boseok-
dc.contributor.authorKim, Daegun-
dc.contributor.authorPark, Chaneui-
dc.contributor.authorKim, Seulwoo-
dc.contributor.authorLee, Minhwan-
dc.contributor.authorLee, Won Bo-
dc.contributor.authorCho, Kilwon-
dc.date.accessioned2020-02-17T06:50:20Z-
dc.date.available2020-02-17T06:50:20Z-
dc.date.created2020-01-21-
dc.date.issued2019-12-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/100959-
dc.description.abstractSolution-processed organic semiconductor thin films with high charge carrier mobility are necessary for development of next-generation electronic applications, but the rapid processing speed demanded for the industrial-scale production of these thin films poses a challenge to control of their thin-film properties, such as crystallinity, morphology, and film-to-film uniformity. Here, we show a new solution coating method that is compatible with a roll-to-roll printing process at a rate of 2 mm s(-1) by using a gap-controllable wire bar, motion-programming strategy, and blended active inks. We demonstrate that the coating bar, the horizontal motion of which is repeatedly brought to an intermittent standstill, results in an improved vertically self-stratified structure and a high crystallinity for organic active inks comprising a semiconducting small molecule and a semiconducting polymer. Furthermore, organic transistors prepared by the developed method show superior hole mobility with high operational stability (hysteresis and kink-free transfer characteristics), high uniformity over a large area of a 4 in. wafer, good reproducibility, and superior electromechanical stabilities on a flexible plastic substrate. The bar-coating approach demonstrated here will be a step toward developing industrial-scale practical organic electronics applications.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.relation.isPartOfACS APPLIED MATERIALS & INTERFACES-
dc.titleMotion -Programmed Bar-Coating Method with Controlled Gap for High-Speed Scalable Preparation of Highly Crystalline Organic Semiconductor Thin Films-
dc.typeArticle-
dc.identifier.doi10.1021/acsami.9b17044-
dc.type.rimsART-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.11, no.50, pp.47153 - 47161-
dc.identifier.wosid000503918300081-
dc.citation.endPage47161-
dc.citation.number50-
dc.citation.startPage47153-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume11-
dc.contributor.affiliatedAuthorLee, Seon Baek-
dc.contributor.affiliatedAuthorKim, Daegun-
dc.contributor.affiliatedAuthorPark, Chaneui-
dc.contributor.affiliatedAuthorCho, Kilwon-
dc.identifier.scopusid2-s2.0-85076560056-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordPlusPHASE-SEPARATION-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordAuthorbar coating-
dc.subject.keywordAuthororganic semiconductors-
dc.subject.keywordAuthorvertical phase separation-
dc.subject.keywordAuthorcharge transport-
dc.subject.keywordAuthororganic transistors-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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