Property of hexafluoroacetylacetonateCu(I) (3,3-dimethyl-1-butene) as a liquid precursor for chemical vapor deposition of copper films

Abstract

An organometallic precursor, hexafluoroacerylacetonate (hfac)Cu(I) (3,3-dimethyl-1-butene) (DMB) was studied for metallorganic chemical vapor deposition of copper thin films. It was found that at 40 degrees C, the vapor pressure was an order of magnitude higher (about 2 Torr) than (hfac)Cu vinyltrimethylsilane, and films could be deposited at the substrate temperature of 100-280 degrees C with a substantially higher deposition rate. The copper films contained no detectable impurities as measured by Auger electron spectroscopy and had a resistivity of about 2.0 mu Omega cm in the deposition temperature range of 150-250 degrees C. From the thermal analysis, (hfac)Cu(I) (DMB) is believed to be stable and no appreciable amount of precipitation was observed on holding the temperature at 65 degrees C for more than a month. (C) 2000 The Electrochemical Society. S1099-0062(99)08-070-2. All rights reserved.