DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J | - |
dc.contributor.author | Yong, KJ | - |
dc.date.accessioned | 2015-06-25T01:50:31Z | - |
dc.date.available | 2015-06-25T01:50:31Z | - |
dc.date.created | 2009-04-02 | - |
dc.date.issued | 2004-03 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.other | 2015-OAK-0000004105 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10110 | - |
dc.description.abstract | Zirconium silicate [(ZrO2)(X)(SiO2)(1-X)] films were deposited by using a combination of precursors: tetrakis(diethylamido)zirconium [Zr(NEt2)(4)] and tetra-n-butyl orthosilicate [Si(O"Bu)(4)]. An atomically flat interface of silicate/silicon was observed with no interfacial silicon oxide layers and impurity concentrations were less than 0.1 atom % (below detection limits). Zirconium silicate films with similar to20% ZrO2 were amorphous up to 800degreesC and, above 900degreesC, phase separation of the films occurred into crystal ZrO2 and amorphous phases. Dielectric constant (k) of the Zr-silicate films was about 7.3. Hysteresis in capacitance-voltage (C-V) measurements was less than 0.02 V. The leakage current density was 1.63x10(-4) A/cm(2) at a bias of 1.0 V. (C) 2004 The Electrochemical Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Characterization of zirconium silicate gate dielectrics deposited on si(100) using Zr(NEt2)(4) and Si((OBu)-Bu-n)(4) | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1149/1.1676114 | - |
dc.author.google | Kim, J | en_US |
dc.author.google | Yong, KJ | en_US |
dc.relation.volume | 7 | en_US |
dc.relation.issue | 5 | en_US |
dc.relation.startpage | F35 | en_US |
dc.relation.lastpage | F37 | en_US |
dc.contributor.id | 10131864 | en_US |
dc.relation.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.5, pp.F35 - F37 | - |
dc.identifier.wosid | 000220130100015 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | F37 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | F35 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 7 | - |
dc.contributor.affiliatedAuthor | Yong, KJ | - |
dc.identifier.scopusid | 2-s2.0-2342525177 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 28 | - |
dc.description.scptc | 27 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | HAFNIUM | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.subject.keywordPlus | MOCVD | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.