DC Field | Value | Language |
---|---|---|
dc.contributor.author | ROH, GIYOUN | - |
dc.contributor.author | KIM, HYEOK JIN | - |
dc.contributor.author | Kwon, Y. | - |
dc.contributor.author | KANG, BONG KOO | - |
dc.date.accessioned | 2020-02-26T06:50:58Z | - |
dc.date.available | 2020-02-26T06:50:58Z | - |
dc.date.created | 2019-10-31 | - |
dc.date.issued | 2019-09 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/101135 | - |
dc.description.abstract | The effect of HfSiON thickness on electron trap distributions under positive bias temperature instability (PBTI) was investigated in HfSiON/SiO2 nMOSFET. Trap distributions of HfSiON/SiO2 nMOSFET were observed by charging and discharging electrons at pre-existing or newly-generated traps. Experimental results show that the peak values of electron trap density shifted to deeper electron trap energy level (E-t) with increasing stress field E-str and stress time t(s). Compared to the Thick HfSiON device, the Thin HfSiON device had lower trap density and slower Et-shift; as a result, the Thin HfSiON device had lower threshold voltage-shift Delta Vth and larger power-law time exponent n of PBTI than the Thick HfSiON device. Low Delta Vth is beneficial for lifetime of HfSiON/SiO2 nMOSFET but large n is not, so the effect of HfSiON thickness on distribution of electron trap must be quantified to enable optimization of HfSiON thickness to yield reliable HfSiON/SiO2 nMOSFETs. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.relation.isPartOf | MICROELECTRONICS RELIABILITY | - |
dc.title | Effect of HfSiON thickness on electron trap distributions of HfSiON/SiO2 nMOSFET under PBTI | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.microrel.2019.06.045 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MICROELECTRONICS RELIABILITY, v.100 | - |
dc.identifier.wosid | 000503907900035 | - |
dc.citation.title | MICROELECTRONICS RELIABILITY | - |
dc.citation.volume | 100 | - |
dc.contributor.affiliatedAuthor | ROH, GIYOUN | - |
dc.contributor.affiliatedAuthor | KIM, HYEOK JIN | - |
dc.contributor.affiliatedAuthor | KANG, BONG KOO | - |
dc.identifier.scopusid | 2-s2.0-85074509103 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | INSTABILITY | - |
dc.subject.keywordPlus | OXIDES | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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