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Cited 14 time in webofscience Cited 12 time in scopus
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dc.contributor.authorHong, K-
dc.contributor.authorKim, SY-
dc.contributor.authorKim, WK-
dc.contributor.authorLee, JL-
dc.date.accessioned2015-06-25T01:51:14Z-
dc.date.available2015-06-25T01:51:14Z-
dc.date.created2009-02-28-
dc.date.issued2007-01-
dc.identifier.issn1099-0062-
dc.identifier.other2015-OAK-0000006524en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10122-
dc.description.abstractWe report the enhancement of electron injection using a magnesium (Mg)-doped tris-(8-hydroxyquinoline) aluminum (Alq3) layer between the Al and Alq(3) layer in flexible organic light emitting diodes (OLEDs). The turn-on voltage decreased from 13 to 11 V and the luminance increased from 800 to 3200 cd/m(2) at 15 V as Mg is doped by 5% to Alq(3) layer. In situ measurements of synchrotron radiation photoelectron spectroscopy revealed that the Fermi level moved about 0.45 eV toward the lowest unoccupied molecular orbital by doping Mg to Alq(3), reducing the energy barrier for electrons via promotion of the electrical and optical properties. (c) 2007 The Electrochemical Society.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.isPartOfELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleEnhancement of electron injection in flexible OLEDs using magnesium-doped tris(8-hydroxyquinoline) aluminum layer-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1149/1.2424268-
dc.author.googleHong, Ken_US
dc.author.googleKim, SYen_US
dc.author.googleLee, JLen_US
dc.author.googleKim, WKen_US
dc.relation.volume10en_US
dc.relation.issue3en_US
dc.contributor.id10105416en_US
dc.relation.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationELECTROCHEMICAL AND SOLID STATE LETTERS, v.10, no.3, pp.H85 - H87-
dc.identifier.wosid000243583700028-
dc.date.tcdate2019-01-01-
dc.citation.endPageH87-
dc.citation.number3-
dc.citation.startPageH85-
dc.citation.titleELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.citation.volume10-
dc.contributor.affiliatedAuthorLee, JL-
dc.identifier.scopusid2-s2.0-33846596225-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc10-
dc.description.scptc8*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusLIGHT-EMITTING DEVICES-
dc.subject.keywordPlusINTERFACES-
dc.subject.keywordPlusDIODES-
dc.relation.journalWebOfScienceCategoryElectrochemistry-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaElectrochemistry-
dc.relation.journalResearchAreaMaterials Science-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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