DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Yun-Seong | - |
dc.contributor.author | Lee, Yeol-Hyeong | - |
dc.contributor.author | Kim, Woo-Sic | - |
dc.contributor.author | Cho, Yong-Jung | - |
dc.contributor.author | Park, JeongKi | - |
dc.contributor.author | Kim, GeonTae | - |
dc.contributor.author | Kim, Ohyun | - |
dc.date.accessioned | 2020-02-27T00:52:41Z | - |
dc.date.available | 2020-02-27T00:52:41Z | - |
dc.date.created | 2019-03-26 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/101236 | - |
dc.description.abstract | The relationship between detrapping of electrons and negative gate bias in amorphous InGaZnO thin film transistors (a-IGZO TFTs) is investigated. In these devices, positive gate-bias stress (PBS) traps electrons at the gate insulator (GI) or at the interface between the channel and the GI, and creates acceptor-like states, which the authors speculate may be oxygen interstitials or zinc vacancies. In contrast, negative gate-bias stress (NBS) increases donor-like states, which are speculated as ionized oxygen vacancies, near the interface. When subsequent negative gate bias (SNB) is applied to a TFT after PBS, electrons are detrapped and donor-like states are increased simultaneously. Measurements with various SNB and PBS conditions suggests that SNB accelerates detrapping of electrons, and that those detrapped electrons interrupts the increase of donor-like states. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.title | Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a-InGaZnO Thin Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/pssa.201800621 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.216, no.4 | - |
dc.identifier.wosid | 000459177700007 | - |
dc.citation.number | 4 | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 216 | - |
dc.contributor.affiliatedAuthor | Kang, Yun-Seong | - |
dc.contributor.affiliatedAuthor | Lee, Yeol-Hyeong | - |
dc.contributor.affiliatedAuthor | Kim, Woo-Sic | - |
dc.contributor.affiliatedAuthor | Kim, Ohyun | - |
dc.identifier.scopusid | 2-s2.0-85059605532 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HUMP CHARACTERISTICS | - |
dc.subject.keywordPlus | DEFECT-CREATION | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordPlus | ILLUMINATION | - |
dc.subject.keywordPlus | INSTABILITY | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordAuthor | a-InGaZnO | - |
dc.subject.keywordAuthor | gate-bias stresses | - |
dc.subject.keywordAuthor | instabilities | - |
dc.subject.keywordAuthor | recovery | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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