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Cited 13 time in webofscience Cited 19 time in scopus
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dc.contributor.authorHong, K-
dc.contributor.authorLee, JL-
dc.date.accessioned2015-06-25T01:51:21Z-
dc.date.available2015-06-25T01:51:21Z-
dc.date.created2009-02-28-
dc.date.issued2008-01-
dc.identifier.issn1099-0062-
dc.identifier.other2015-OAK-0000007371en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10124-
dc.description.abstractWe demonstrate an inverted top-emitting organic light-emitting diode using a transparent silver oxide (AgOx) anode formed by oxygen plasma treatment. The turn-on voltage decreased from 22 to 12 V, and the luminance increased from 175 to 630 cd/m(2) at 150 mA/cm(2) as the Ag anode was treated by O-2 plasma. The measurement of synchrotron radiation photoelectron spectroscopy and ultraviolet photoelectron spectroscopy revealed that the Ag changed AgOx and the work function was increased by 0.45 eV during O2 plasma treatment. The AgOx lowered the injection barrier for holes, enhancing the electroluminescent properties. (c) 2007 The Electrochemical Society.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.isPartOfELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleInverted top-emitting organic light-emitting diodes using transparent silver oxide anode formed by oxygen plasma-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1149/1.2817479-
dc.author.googleHong, Ken_US
dc.author.googleLee, JLen_US
dc.relation.volume11en_US
dc.relation.issue2en_US
dc.relation.startpageH29en_US
dc.relation.lastpageH31en_US
dc.contributor.id10105416en_US
dc.relation.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.2, pp.H29 - H31-
dc.identifier.wosid000251907400017-
dc.date.tcdate2019-01-01-
dc.citation.endPageH31-
dc.citation.number2-
dc.citation.startPageH29-
dc.citation.titleELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.citation.volume11-
dc.contributor.affiliatedAuthorLee, JL-
dc.identifier.scopusid2-s2.0-37549069359-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc13-
dc.description.scptc19*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusAG-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusCATHODE-
dc.subject.keywordPlusLAYER-
dc.relation.journalWebOfScienceCategoryElectrochemistry-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaElectrochemistry-
dc.relation.journalResearchAreaMaterials Science-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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