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Cited 3 time in webofscience Cited 3 time in scopus
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dc.contributor.authorSon, JY-
dc.contributor.authorShin, YS-
dc.contributor.authorShin, YH-
dc.contributor.authorLee, EK-
dc.contributor.authorJang, HM-
dc.date.accessioned2015-06-25T01:52:15Z-
dc.date.available2015-06-25T01:52:15Z-
dc.date.created2011-01-04-
dc.date.issued2011-01-
dc.identifier.issn1099-0062-
dc.identifier.other2015-OAK-0000022529en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10139-
dc.description.abstractWe investigated the canonical ferroelectric response of a thin ferroelectric polymer film using a piezoelectric force microscopy method. The thin ferroelectric poly(vinyliden fluoride-ran-trifluoroethylene) layer with a thickness of 5 nm was prepared on a (111)Pt/TiO(2)/SiO(2)/Si substrate by a Langmuir-Blodgett method. The flip speed into upward polarization in the thin ferroelectric polymer layer is faster than that into downward polarization because the adhesion strength of the fluorine atoms in the ferroelectric polymer layer with the Pt electrode is stronger than that of the hydrogen atoms. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3507412] All rights reserved.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.isPartOfELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleFast Domain Wall Switching in a Thin Ferroelectric Polymer Layer-
dc.typeArticle-
dc.contributor.college첨단재료과학부en_US
dc.identifier.doi10.1149/1.3507412-
dc.author.googleSon, JYen_US
dc.author.googleShin, YSen_US
dc.author.googleJang, HMen_US
dc.author.googleLee, EKen_US
dc.author.googleShin, YHen_US
dc.relation.volume14en_US
dc.relation.issue1en_US
dc.relation.startpageG1en_US
dc.relation.lastpageG3en_US
dc.contributor.id10084272en_US
dc.relation.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.1, pp.G1 - G3-
dc.identifier.wosid000284317600012-
dc.date.tcdate2019-01-01-
dc.citation.endPageG3-
dc.citation.number1-
dc.citation.startPageG1-
dc.citation.titleELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.citation.volume14-
dc.contributor.affiliatedAuthorJang, HM-
dc.identifier.scopusid2-s2.0-78751549488-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc2-
dc.description.scptc2*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusLANGMUIR-BLODGETT-FILMS-
dc.subject.keywordPlusCOPOLYMERS-
dc.subject.keywordPlusMEMORIES-
dc.relation.journalWebOfScienceCategoryElectrochemistry-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaElectrochemistry-
dc.relation.journalResearchAreaMaterials Science-

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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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