DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Eunpa | - |
dc.contributor.author | Rho, Junsuk | - |
dc.contributor.author | Ryu, Sang-gil | - |
dc.contributor.author | Hwang, David | - |
dc.contributor.author | Lee, Yoonkyung | - |
dc.contributor.author | Kim, Kyunghoon | - |
dc.contributor.author | Grigoropoulos, Costas | - |
dc.date.accessioned | 2020-03-26T01:52:33Z | - |
dc.date.available | 2020-03-26T01:52:33Z | - |
dc.date.created | 2019-05-08 | - |
dc.date.issued | 2019-05 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/101864 | - |
dc.description.abstract | Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire growth. This localization of the laser-driven growth can realize on-demand and site-selective direct synthesis of length-controlled nanowires on catalytic gold nanodots. The length of the InN nanowires is controlled by the laser irradiation time at a fixed power. Energy dispersive X-ray, Raman and photoluminescence spectroscopic analyzes respectively characterize the elemental composition, crystallinity, and emission properties of as-grown InN nanowires. (c) 2019 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
dc.title | Length-controlled and selective growth of individual indium nitride nanowires by localized laser heating | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/1882-0786/ab1713 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.12, no.5 | - |
dc.identifier.wosid | 000465997600001 | - |
dc.citation.number | 5 | - |
dc.citation.title | APPLIED PHYSICS EXPRESS | - |
dc.citation.volume | 12 | - |
dc.contributor.affiliatedAuthor | Rho, Junsuk | - |
dc.identifier.scopusid | 2-s2.0-85065653339 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GROUP-III | - |
dc.subject.keywordPlus | BAND-GAP | - |
dc.subject.keywordPlus | MOCVD GROWTH | - |
dc.subject.keywordPlus | CUBIC INN | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | INGAN | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SI(111) | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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