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dc.contributor.authorHWANG, HYUNSANG-
dc.contributor.authorJeonghwan Song-
dc.contributor.authorSUNG, CHANG HYUCK-
dc.contributor.authorDONGWOOK, LEE-
dc.contributor.authorKWAK, MYOUNG HOON-
dc.contributor.authorSeokjae Lim-
dc.date.accessioned2020-04-04T14:03:44Z-
dc.date.available2020-04-04T14:03:44Z-
dc.date.created2020-04-03-
dc.date.issued2019-06-11-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/102281-
dc.publisherIEEE(Institute of Electrical and Electronics Engineers)-
dc.relation.isPartOf2019 Symposia on VLSI Technology and Circuits-
dc.relation.isPartOf2019 Symposium on VLSI Technology Digest of Technical Papers-
dc.titleUltra-thin (<10nm) Dual-oxide (Al2O3/TiO2) Hybrid Device (Memory/Selector) with Extremely Low Ioff (<1nA) and Ireset (<1nA) for 3D Storage Class Memory-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2019 Symposia on VLSI Technology and Circuits-
dc.citation.conferenceDate2019-06-09-
dc.citation.conferencePlaceJA-
dc.citation.title2019 Symposia on VLSI Technology and Circuits-
dc.contributor.affiliatedAuthorHWANG, HYUNSANG-
dc.contributor.affiliatedAuthorSUNG, CHANG HYUCK-
dc.contributor.affiliatedAuthorDONGWOOK, LEE-
dc.contributor.affiliatedAuthorKWAK, MYOUNG HOON-
dc.description.journalClass1-
dc.description.journalClass1-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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