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dc.contributor.authorSEONGJAE, HEO-
dc.contributor.authorJaehyuk Park-
dc.contributor.authorJongmyung Yoo-
dc.contributor.authorSeokjae Lim-
dc.contributor.authorLEE, SANGMIN-
dc.contributor.authorHWANG, HYUNSANG-
dc.date.accessioned2020-04-08T00:50:28Z-
dc.date.available2020-04-08T00:50:28Z-
dc.date.created2020-04-07-
dc.date.issued2020-02-14-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/102572-
dc.publisher한국반도체산업협회, 한국반도체연구조합-
dc.relation.isPartOfThe 27th Korean Conference on Semiconductors / 제 27회 한국반도체학술대회-
dc.relation.isPartOfThe 27th Korean Conference on Semiconductors / 제 27회 한국반도체학술대회-
dc.titleImproved Switching Speed Characteristics of Ag-doped HfO2 Atomic Switch Devices-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 27th Korean Conference on Semiconductors / 제 27회 한국반도체학술대회-
dc.citation.conferenceDate2020-02-12-
dc.citation.conferencePlaceKO-
dc.citation.titleThe 27th Korean Conference on Semiconductors / 제 27회 한국반도체학술대회-
dc.contributor.affiliatedAuthorSEONGJAE, HEO-
dc.contributor.affiliatedAuthorLEE, SANGMIN-
dc.contributor.affiliatedAuthorHWANG, HYUNSANG-
dc.description.journalClass2-
dc.description.journalClass2-

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