An approach to extract extrinsic parameters of HEMTs

Abstract

To extract extrinsic resistances, conventional cold-FET methods require additional DC measurements or channel technological parameters. Additionally, the methods need at least two sets of cold-FET S-parameters measured at different cold-FET bias conditions in order to completely determine gate and drain pad capacitance as well as extrinsic gate, source and drain inductance and their resistances. One set of S-parameters handles the extraction of extrinsic inductances, and the other set extracts the gate and drain pad capacitance. To be free from additional DC measurement or channel technological parameters and reduce the number of sets of cold-FET S-parameters, we propose a cold-FET method that can extract all the extrinsic elements including the gate and drain capacitance, using only one set of cold-FET S-parameters. The method has shown excellent agreement between modeled and measured S-parameters up to 62 GHz at 56 different normal operating bias points.