Transparent Flexible Nanoline Field-Effect Transistor Array with High Integration in a Large Area

Abstract

Transparent flexible transistor array requests large-area fabrication, high integration, high manufacturing throughput, inexpensive process, uniformity in transistor performance, and reproducibility. This study suggests a facile and reliable approach to meet the requirements. We use the Al-coated polymer nanofiber patterns obtained by electrohydrodynamic (EHD) printing as a photomask. We use the lithography and deposition to produce highly aligned nanolines (NLs) of metals, insulators, and semiconductors on large substrates. With these NLs, we demonstrate a highly integrated NL field-effect transistor (NL-FET) array (10(5)/(4 X 4 in(2)), 254 pixel-per-inch) made of pentacene and indium zinc oxide semiconductor NLs. In addition, we demonstrate a NL complementary inverter (NL-CI) circuit consisting of pentacene NLs. The and fullerene NL-FET array shows high transparency (similar to 90%), flexibility (stable at 2.5 mm bending radius), uniformity (similar to 90%), and high performances (mobility = 0.52 cm(2)/(V s), on-off ratio = 7.0 X 10(6)). The NL-CI circuit also shows high transparency, flexibility, and typical switching characteristic with a gain of 21. The reliable large-scale fabrication of the various NLs proposed in this study is expected to be applied for manufacturing transparent flexible nanoelectronic devices.