A High-Throughput On-Chip Variation Monitoring Circuit for MOSFET Threshold Voltage Using VCDL and Time-to-Digital Converter

Abstract

A high-throughput on-chip monitoring circuit with a digital output is proposed for the variations of the NMOS and PMOS threshold voltages. A voltage-controlled delay line (VCDL) and a time-to-digital converter (TDC) are used to convert a small difference in analog voltage into a large difference in time delay. This circuit was applied to the transistors of W = 10 mu m and L = 0.18 mu m in a 16 x 16 array matrix fabricated with a 0.18-mu m process. The measurement of the threshold voltage shows that the maximum peak-to-peak intra-chip variation of NMOS and PMOS transistors are about 31.7 mV and 32.2 mV, respectively, for the temperature range from -25 degrees C to 75 degrees C. The voltage resolutions of NMOS and PMOS transistors are measured to be 1.10 mV/bit and 3.53 mV/bit at 25 degrees C, respectively. The 8-bit digital code is generated for the threshold voltage of a transistor in every 125 ns, which corresponds to the 8-MHz throughput.