AN ELECTRICAL CHARACTERISTICS-BASED PIECEWISE-LINEAR DC MODEL OF THE MOSFET

Abstract

This paper presents a new piecewise-linear de model of the MOSFET. The proposed model is derived for long channel MOSFETs from the Shichman-Hodges equations, with emphasis on the accurate modeling of the major electrical characteristics, and is extended for short channel MOSFETs. The per formance of the model is evaluated by comparing current-voltage characteristics and voltage transfer characteristics with those of the SPICE level-1 and Sakurai models. The experimental results, using three or fewer piecewise-linear region boundaries on the axes of V-GS, V-GD and V-SB, demonstrate that the proposed model provides enough accuracy for practical use with digital circuits.