Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition
SCOPUS
- Title
- Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition
- Authors
- KIM, SEYOUNG
- Date Issued
- 2012-05-18
- Publisher
- APS Physics
- Abstract
- We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors nu = 4, 8, 12, consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bilayers provides the carrier density in each layer as a function of the gate bias and the interlayer capacitance.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/103391
- DOI
- 10.1103/PhysRevB.85.201408
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 85, no. 20, page. 201408 - 201413, 2012-05-18
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