Magnetotransport Properties of Quasi-Free-Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
SCIE
SCOPUS
- Title
- Magnetotransport Properties of Quasi-Free-Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
- Authors
- KIM, SEYOUNG
- Date Issued
- 2011-09
- Publisher
- American Chemical Society
- Abstract
- We investigate the magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H-2 intercalation. At the charge neutrality point, the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors (v) multiples of four (v = 4, 8, 12), as well as broken valley symmetry QHSs at v = 0 and v = 6. These results unambiguously show that the quasi-free-standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/103394
- DOI
- 10.1021/nl201430a
- ISSN
- 1530-6984
- Article Type
- Article
- Citation
- Nano Letters, vol. 11, no. 9, page. 3624 - 3628, 2011-09
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