DC Field | Value | Language |
---|---|---|
dc.contributor.author | KIM, SEYOUNG | - |
dc.date.accessioned | 2020-04-14T00:51:28Z | - |
dc.date.available | 2020-04-14T00:51:28Z | - |
dc.date.created | 2020-04-13 | - |
dc.date.issued | 2010-12 | - |
dc.identifier.issn | 0018-9219 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/103398 | - |
dc.description.abstract | Owing in part to complementary metal-oxide-semiconductor (CMOS) scaling issues, the semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide a solution beyond the 22-nm node. Single and few layers of carbon sheets (graphene) have been fabricated by a variety of techniques including mechanical exfoliation and chemical vapor deposition, and field-effect devices have been demonstrated with room temperature field-effect mobilities close to 10 000 cm 2 /Vs. But since graphene is a gapless semiconductor, these transistors have high off-state leakage and nonsaturating drive currents. This is problematic for digital logic, but is acceptable for analog device applications such as low-noise amplifiers and radio-frequency (RF)/millimeter-wave field-effect transistors (FETs). The remarkable transport physics of graphene due to its linear bandstructure have led to novel beyond CMOS logic devices as well, such as “pseudospin” devices. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.relation.isPartOf | Proceedings of the IEEE | - |
dc.title | Graphene for CMOS and Beyond CMOS Applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/JPROC.2010.2064151 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Proceedings of the IEEE, v.98, no.12, pp.2032 - 2046 | - |
dc.identifier.wosid | 000284410800006 | - |
dc.citation.endPage | 2046 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 2032 | - |
dc.citation.title | Proceedings of the IEEE | - |
dc.citation.volume | 98 | - |
dc.contributor.affiliatedAuthor | KIM, SEYOUNG | - |
dc.identifier.scopusid | 2-s2.0-78650024868 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | 2-DIMENSIONAL ELECTRON | - |
dc.subject.keywordPlus | EPITAXIAL GRAPHENE | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | GRAPHITE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | BANDGAP | - |
dc.subject.keywordPlus | STATE | - |
dc.subject.keywordAuthor | Beyond complementary metal-oxide-semiconductor (CMOS) logic | - |
dc.subject.keywordAuthor | graphene field-effect transistors (FETs) | - |
dc.subject.keywordAuthor | nanoelectronics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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