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dc.contributor.authorKANG, BONG KOO-
dc.contributor.authorGiyoun Roh-
dc.contributor.authorHyeokjin Kim-
dc.date.accessioned2020-04-17T01:53:30Z-
dc.date.available2020-04-17T01:53:30Z-
dc.date.created2020-04-16-
dc.date.issued2019-09-02-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/103494-
dc.publisherSSDM-
dc.relation.isPartOf2019 International Conference on Solid State Devices and Materials-
dc.relation.isPartOfJJAP-
dc.titleSystematic analysis of electron traps of HfSiON/SiO2 nMOSFETs using TSCIS-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2019 International Conference on Solid State Devices and Materials-
dc.citation.conferenceDate2019-09-02-
dc.citation.conferencePlaceJA-
dc.citation.title2019 International Conference on Solid State Devices and Materials-
dc.contributor.affiliatedAuthorKANG, BONG KOO-
dc.contributor.affiliatedAuthorHyeokjin Kim-
dc.description.journalClass1-
dc.description.journalClass1-

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강봉구KANG, BONG KOO
Dept of Electrical Enginrg
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