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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | KIM, JS | - |
| dc.contributor.author | LEE, JL | - |
| dc.contributor.author | MA, DS | - |
| dc.contributor.author | PARK, HM | - |
| dc.contributor.author | SHIM, KH | - |
| dc.contributor.author | TANIGAWA, S | - |
| dc.contributor.author | UEDONO, A | - |
| dc.date.accessioned | 2015-06-25T02:07:56Z | - |
| dc.date.available | 2015-06-25T02:07:56Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 1989-01-01 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.other | 2015-OAK-0000008411 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10437 | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.342559 | - |
| dc.author.google | KIM, JS | en_US |
| dc.author.google | LEE, JL | en_US |
| dc.author.google | UEDONO, A | en_US |
| dc.author.google | TANIGAWA, S | en_US |
| dc.author.google | SHIM, KH | en_US |
| dc.author.google | PARK, HM | en_US |
| dc.author.google | MA, DS | en_US |
| dc.relation.volume | 65 | en_US |
| dc.relation.startpage | 396 | en_US |
| dc.relation.lastpage | 397 | en_US |
| dc.contributor.id | 10105416 | en_US |
| dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.65, no.1, pp.396 - 397 | - |
| dc.identifier.wosid | A1989R470600067 | - |
| dc.citation.endPage | 397 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 396 | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 65 | - |
| dc.contributor.affiliatedAuthor | LEE, JL | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 4 | - |
| dc.type.docType | Note | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg