Effects of in situ treatment on InGaAs/InP heterointerfaces produced by organometallic chemical vapor deposition regrowth

Abstract

The properties of heterostructures containing an InGaAs/InP heterointerface generated by organometallic chemical vapor deposition regrowth have been investigated. Regrowth of InGaAs on InP was carried out after different sample preparations including wet chemical etching and in situ treatment prior to the regrowth. The electrical properties of the heterointerface were studied by performing deep-level transient spectroscopy measurements. An electron trap was observed in the interface region of the samples either in situ etched with HCl gas or annealed under PH3 overpressure. Temporal pulse response measurements were employed to study the effects of this electron trap on the optical performance of p-i-n photodetectors containing this regrown heterointerface.