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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | CHUNG, WJ | - |
| dc.contributor.author | JEONG, YH | - |
| dc.contributor.author | KIM, GT | - |
| dc.contributor.author | KIM, KI | - |
| dc.contributor.author | KIM, ST | - |
| dc.date.accessioned | 2015-06-25T02:08:18Z | - |
| dc.date.available | 2015-06-25T02:08:18Z | - |
| dc.date.created | 2009-08-06 | - |
| dc.date.issued | 1991-05-01 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.other | 2015-OAK-0000008477 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10444 | - |
| dc.description.abstract | The enhancement of Schottky barrier heights on InP substrate using a thin layer of phosphorus-nitride (P3N5), grown by a direct photochemical vapor deposition process with a gaseous mixture of PCl3 and NH3, has been studied. A Au-Schottky diode formed using the in situ processes has a 50-angstrom P3N5 intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and a reverse leakage current of 5.0 x 10(-8) angstrom/cm2 at 1 V. The breakdown voltage was larger than 30 V. The thin-film/InP interface was investigated using x-ray photoelectron spectroscopy. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | EFFECTS OF PHOTOCHEMICAL VAPOR-DEPOSITION PHOSPHORUS-NITRIDE INTERFACIAL LAYER ON ELECTRICAL CHARACTERISTICS OF AU-INP SCHOTTKY DIODES | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | en_US |
| dc.identifier.doi | 10.1063/1.348972 | - |
| dc.author.google | CHUNG, WJ | en_US |
| dc.author.google | JEONG, YH | en_US |
| dc.author.google | KIM, ST | en_US |
| dc.author.google | KIM, KI | en_US |
| dc.author.google | KIM, GT | en_US |
| dc.relation.volume | 69 | en_US |
| dc.relation.startpage | 6699 | en_US |
| dc.relation.lastpage | 6700 | en_US |
| dc.contributor.id | 10106021 | en_US |
| dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.69, no.9, pp.6699 - 6700 | - |
| dc.identifier.wosid | A1991FM17100071 | - |
| dc.citation.endPage | 6700 | - |
| dc.citation.number | 9 | - |
| dc.citation.startPage | 6699 | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 69 | - |
| dc.contributor.affiliatedAuthor | JEONG, YH | - |
| dc.identifier.scopusid | 2-s2.0-0037848258 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 16 | - |
| dc.type.docType | Article | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg