DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwak, JS | - |
dc.contributor.author | Baik, HK | - |
dc.contributor.author | Kim, JH | - |
dc.contributor.author | Lee, SM | - |
dc.contributor.author | Ryu, HJ | - |
dc.contributor.author | Je, JH | - |
dc.date.accessioned | 2015-06-25T02:10:21Z | - |
dc.date.available | 2015-06-25T02:10:21Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1999-05-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000000708 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10484 | - |
dc.description.abstract | In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 Angstrom) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films. (C) 1999 American Institute of Physics. [S0021-8979(99)02909-6]. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.370209 | - |
dc.author.google | KWAK, JS | en_US |
dc.author.google | BAIK, HK | en_US |
dc.author.google | JE, JH | en_US |
dc.author.google | RYU, HJ | en_US |
dc.author.google | LEE, SM | en_US |
dc.author.google | KIM, JH | en_US |
dc.relation.volume | 85 | en_US |
dc.relation.issue | 9 | en_US |
dc.relation.startpage | 6898 | en_US |
dc.relation.lastpage | 6903 | en_US |
dc.contributor.id | 10123980 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.85, no.9, pp.6898 - 6903 | - |
dc.identifier.wosid | 000079871200096 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 6903 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 6898 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 85 | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-0011402417 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 7 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | BEAM-ASSISTED DEPOSITION | - |
dc.subject.keywordPlus | X-RAY MIRRORS | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | TANTALUM | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | VLSI | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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