Interface chemistry and electrical properties of SrVO3/LaAlO3 heterostructures

Abstract

SrVO3 films were grown by laser molecular beam epitaxy on LaAlO3 substrates. For a 10-nm-thick film, its resistivity could be reduced by a factor of 4 by inserting a single La-O atomic layer on an oxygen-annealed LaAlO3 substrate. X-ray diffraction and x-ray photoelectron spectroscopy measurements revealed that oxygen defect concentrations could be varied significantly by controlling the substrate terminations, i.e., interface chemistry. It was suggested that the interface chemistry could influence formation of extended defects and result in changes in electrical properties. (C) 2000 American Institute of Physics. [S0021-8979(01)04501-7].