DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, KS | - |
dc.contributor.author | Baik, S | - |
dc.date.accessioned | 2015-06-25T02:10:49Z | - |
dc.date.available | 2015-06-25T02:10:49Z | - |
dc.date.created | 2009-08-11 | - |
dc.date.issued | 2000-06-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000001321 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10493 | - |
dc.description.abstract | Strain relaxation and its effect on domain formation of epitaxial PbTiO3 thin films grown on MgO (001) substrates were investigated as a function of film thickness by two-dimensional reciprocal space mapping using synchrotron x-ray diffraction. Within a few hundreds of angstrom region, it was observed that c-domain abundance, alpha, was critically dependent on film thickness. As the film thickness increased further, alpha was saturated at a value of similar to 0.75. The HK mesh scan on PbTiO3 (100) reflections revealed that directional tilting of a domains with four-fold symmetry began to develop as the film thickness exceeded 650 Angstrom. Thermodynamic equilibrium relief of the coherency strain was evaluated based on Mattews-Blakslee criteria that determine thickness dependent misfit accommodation. This theoretical consideration with experimental results led us to conclude that the unrelaxed residual misfit strain has a significant effect on the domain formation, particularly in the region below the thickness of 1000 Angstrom. (C) 2000 American Institute of Physics. [S0021-8979(00)07109-7]. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Thickness dependence of domain formation in epitaxial PbTiO3 thin films grown on MgO (001) substrates | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.373493 | - |
dc.author.google | Lee, KS | en_US |
dc.author.google | Baik, S | en_US |
dc.relation.volume | 87 | en_US |
dc.relation.issue | 11 | en_US |
dc.relation.startpage | 8035 | en_US |
dc.relation.lastpage | 8038 | en_US |
dc.contributor.id | 10078291 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.87, no.11, pp.8035 - 8038 | - |
dc.identifier.wosid | 000087067400066 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 8038 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 8035 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 87 | - |
dc.contributor.affiliatedAuthor | Baik, S | - |
dc.identifier.scopusid | 2-s2.0-0038162982 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 28 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | RELAXATION | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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