DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, KH | - |
dc.contributor.author | Baik, S | - |
dc.contributor.author | Kim, SS | - |
dc.date.accessioned | 2015-06-25T02:11:39Z | - |
dc.date.available | 2015-06-25T02:11:39Z | - |
dc.date.created | 2009-08-11 | - |
dc.date.issued | 2002-09-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000002850 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10509 | - |
dc.description.abstract | Effects of Ni or Mn doping in (Ba0.5Sr0.5)TiO3 thin films on leakage current behaviors of Pt/(Ba0.5Sr0.5)TiO3/Pt capacitors were investigated. The leakage current level was found to reduce significantly after the doping over a wide range of voltages and temperatures. The leakage current in an undoped capacitor was largely governed by the Fowler-Nordheim tunneling, and its onset voltage was greatly increased in doped capacitors. The suppression of leakage current in doped capacitors appeared to be caused by a widened depletion layer, which decreases the likelihood of tunneling. (C) 2002 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Significant suppression of leakage current in (Ba,Sr)TiO3 thin films by Ni or Mn doping | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1495526 | - |
dc.author.google | Ahn, KH | en_US |
dc.author.google | Baik, S | en_US |
dc.author.google | Kim, SS | en_US |
dc.relation.volume | 92 | en_US |
dc.relation.issue | 5 | en_US |
dc.relation.startpage | 2651 | en_US |
dc.relation.lastpage | 2654 | en_US |
dc.contributor.id | 10078291 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.92, no.5, pp.2651 - 2654 | - |
dc.identifier.wosid | 000177548500068 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2654 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 2651 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 92 | - |
dc.contributor.affiliatedAuthor | Baik, S | - |
dc.identifier.scopusid | 2-s2.0-0036732159 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 60 | - |
dc.description.scptc | 70 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | MEMORIES | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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