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Cited 6 time in webofscience Cited 6 time in scopus
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dc.contributor.authorDoh, SJ-
dc.contributor.authorChoi, SD-
dc.contributor.authorJe, JH-
dc.contributor.authorCho, TS-
dc.date.accessioned2015-06-25T02:11:57Z-
dc.date.available2015-06-25T02:11:57Z-
dc.date.created2009-02-28-
dc.date.issued2002-05-15-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000002629en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10515-
dc.description.abstractWe have studied the inhibition of abnormal acicular grain growth of the Ba-ferrite phase in the crystallization of Ba-ferrite films using real time synchrotron x-ray scattering, field emission scanning electron microscope, and vibrating sample magnetometer. Amorphous Ba-ferrite film on a SiO2 substrate is naturally crystallized into the abnormal acicular Ba-ferrite grains (major axis of similar to1000 nm in the in-plane direction). However, on alpha-Al2O3 substrate, fine grain sizes of the primary Ba-ferrite phase (similar to70 nm) are obtained during crystallization. Nucleation of the alpha-Fe2O3 phase on the alpha-Al2O3 surface at an early stage induces the inhibition of the abnormal acicular grain growth of the Ba-ferrite phase. Because of the grain size refinement of the magnetic Ba-ferrite phase, the intrinsic coercivity of Ba-ferrite/alpha-Al2O3 film enhances 4.4 kOe, much larger than that of Ba-ferrite/SiO2 film (1.9 kOe). We suggest that the secondary alpha-Fe2O3 phase act as a useful inhibitor to abnormal grain growth in Ba-ferrite films for high-density recording media. (C) 2002 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleInhibition of abnormal acicular grain growth of nanostructured Ba-ferrite films by secondary alpha-Fe2O3 phase-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.1451307-
dc.author.googleDoh, SJen_US
dc.author.googleChoi, SDen_US
dc.author.googleCho, TSen_US
dc.author.googleJe, JHen_US
dc.relation.volume91en_US
dc.relation.issue10en_US
dc.relation.startpage7869en_US
dc.relation.lastpage7871en_US
dc.contributor.id10123980en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameConference Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.91, no.10, pp.7869 - 7871-
dc.identifier.wosid000175576400015-
dc.date.tcdate2019-01-01-
dc.citation.endPage7871-
dc.citation.number10-
dc.citation.startPage7869-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume91-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-0037095271-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc6-
dc.description.scptc6*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusBARIUM HEXAFERRITE-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusMEDIA-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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