DC Field | Value | Language |
---|---|---|
dc.contributor.author | Doh, SJ | - |
dc.contributor.author | Choi, SD | - |
dc.contributor.author | Je, JH | - |
dc.contributor.author | Cho, TS | - |
dc.date.accessioned | 2015-06-25T02:11:57Z | - |
dc.date.available | 2015-06-25T02:11:57Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2002-05-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000002629 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10515 | - |
dc.description.abstract | We have studied the inhibition of abnormal acicular grain growth of the Ba-ferrite phase in the crystallization of Ba-ferrite films using real time synchrotron x-ray scattering, field emission scanning electron microscope, and vibrating sample magnetometer. Amorphous Ba-ferrite film on a SiO2 substrate is naturally crystallized into the abnormal acicular Ba-ferrite grains (major axis of similar to1000 nm in the in-plane direction). However, on alpha-Al2O3 substrate, fine grain sizes of the primary Ba-ferrite phase (similar to70 nm) are obtained during crystallization. Nucleation of the alpha-Fe2O3 phase on the alpha-Al2O3 surface at an early stage induces the inhibition of the abnormal acicular grain growth of the Ba-ferrite phase. Because of the grain size refinement of the magnetic Ba-ferrite phase, the intrinsic coercivity of Ba-ferrite/alpha-Al2O3 film enhances 4.4 kOe, much larger than that of Ba-ferrite/SiO2 film (1.9 kOe). We suggest that the secondary alpha-Fe2O3 phase act as a useful inhibitor to abnormal grain growth in Ba-ferrite films for high-density recording media. (C) 2002 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Inhibition of abnormal acicular grain growth of nanostructured Ba-ferrite films by secondary alpha-Fe2O3 phase | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1451307 | - |
dc.author.google | Doh, SJ | en_US |
dc.author.google | Choi, SD | en_US |
dc.author.google | Cho, TS | en_US |
dc.author.google | Je, JH | en_US |
dc.relation.volume | 91 | en_US |
dc.relation.issue | 10 | en_US |
dc.relation.startpage | 7869 | en_US |
dc.relation.lastpage | 7871 | en_US |
dc.contributor.id | 10123980 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Conference Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.91, no.10, pp.7869 - 7871 | - |
dc.identifier.wosid | 000175576400015 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 7871 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 7869 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 91 | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-0037095271 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 6 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | BARIUM HEXAFERRITE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MEDIA | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.