DC Field | Value | Language |
---|---|---|
dc.contributor.author | NIKAM, REVANNATH | - |
dc.contributor.author | Rajput, Krishn Gopal | - |
dc.contributor.author | Hwang, Hyunsang | - |
dc.date.accessioned | 2021-06-01T02:07:10Z | - |
dc.date.available | 2021-06-01T02:07:10Z | - |
dc.date.created | 2021-03-08 | - |
dc.date.issued | 2021-02 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/105179 | - |
dc.description.abstract | The first report of a quantized conductance atomic threshold switch (QCATS) using an atomically-thin hexagonal boron nitride (hBN) layer is provided. This QCATS has applications in memory and logic devices. The QCATS device shows a stable and reproducible conductance quantization state at 1 center dot G(0) by forming single-atom point contact through a monoatomic boron defect in an hBN layer. An atomistic switching mechanism in hBN-QCATS is confirmed by in situ visualization of mono-atomic conductive filaments. Atomic defects in hBN are the key factor that affects the switching characteristic. The hBN-QCATS has excellent switching characteristics such as low operation voltage of 0.3 V, low "off" current of 1 pA, fast switching of 50 ns, and high endurance > 10(7) cycles. The variability of switching characteristics, which are the major problems of switching device, can be solved by reducing the area and thickness of the switching region to form single-atom point contact. The switching layer thickness is scaled down to the single-atom (approximate to 0.33 nm) h-BN layer, and the switching area is limited to single-atom defects. By implementing excellent switching characteristics using single-layer hBN, the possibility of implementing stable and uniform atomic-switching devices for future memory and logic applications is confirmed. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | SMALL | - |
dc.subject | QUANTIZED CONDUCTANCE | - |
dc.subject | GRAPHENE | - |
dc.title | Single-Atom Quantum-Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/smll.202006760 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SMALL, v.17, no.7 | - |
dc.identifier.wosid | 000612039200001 | - |
dc.citation.number | 7 | - |
dc.citation.title | SMALL | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | NIKAM, REVANNATH | - |
dc.contributor.affiliatedAuthor | Rajput, Krishn Gopal | - |
dc.contributor.affiliatedAuthor | Hwang, Hyunsang | - |
dc.identifier.scopusid | 2-s2.0-85099914110 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | atomic contacts | - |
dc.subject.keywordAuthor | atomic switch | - |
dc.subject.keywordAuthor | defects | - |
dc.subject.keywordAuthor | hBN | - |
dc.subject.keywordAuthor | quantized conductance | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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