DC Field | Value | Language |
---|---|---|
dc.contributor.author | JAESEOUNG, PARK | - |
dc.contributor.author | CHADOL, OH | - |
dc.contributor.author | SON, JUNWOO | - |
dc.date.accessioned | 2021-06-01T03:51:59Z | - |
dc.date.available | 2021-06-01T03:51:59Z | - |
dc.date.created | 2021-03-05 | - |
dc.date.issued | 2021-02 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/105337 | - |
dc.description.abstract | Ionic–electronic coupling in a lattice strongly influences the memory and learning process by synaptic weight update in electrochemical synaptic transistors. In particular, anisotropic crystal symmetry offers a highly anisotropic diffusion process, which leads to facilitated ion migration and efficient coupling in synaptic devices. Here, we report all-solid-state VO2 synaptic transistors in which the proton diffusion under gate bias can be tuned by utilizing different crystal facets in anisotropic VO2 channels. Synaptic weight update (i.e., excitatory post-synaptic current) by a proton (H+) in the VO2 channel was sensitively tuned depending on the empty tunnel alignment of VO2 layers. By emulating synaptic functions using diffusion-pathway-controlled transistors, the alignment of a facile ionic pathway with gating direction increases the retention of H+ in VO2 lattices by locating H+ into the deep regions from the interfaces, and thus strengthens long-term memory in artificial synaptic devices. These results demonstrate that the control of field-driven ionic redistribution guided by crystal anisotropy provides an opportunity to manipulate the learning and forgetting behavior in artificial synaptic devices. | - |
dc.language | English | - |
dc.publisher | Royal Society of Chemistry | - |
dc.relation.isPartOf | Journal of Materials Chemistry C | - |
dc.title | Anisotropic ionic transport-controlled synaptic weight update by protonation in a VO2 transistor | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/D0TC05628F | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Journal of Materials Chemistry C, v.9, no.7, pp.2521 - 2529 | - |
dc.identifier.wosid | 000623516700031 | - |
dc.citation.endPage | 2529 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 2521 | - |
dc.citation.title | Journal of Materials Chemistry C | - |
dc.citation.volume | 9 | - |
dc.contributor.affiliatedAuthor | JAESEOUNG, PARK | - |
dc.contributor.affiliatedAuthor | CHADOL, OH | - |
dc.contributor.affiliatedAuthor | SON, JUNWOO | - |
dc.identifier.scopusid | 2-s2.0-85101819663 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.