DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baik, JM | - |
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Shon, Y | - |
dc.contributor.author | Kang, TW | - |
dc.date.accessioned | 2015-06-25T02:12:51Z | - |
dc.date.available | 2015-06-25T02:12:51Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-06-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000003418 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10533 | - |
dc.description.abstract | The effect of microstructural change on both magnetic and optical properties of Mn-implanted p-type GaN was studied. A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GAN and subsequently annealing. The magnetization measurement showed that the Curie temperature was the highest in the 800degreesC annealed sample due to the formation of Ga-Mn magnetic phases. The annealing at a higher temperature of 900degreesC produced antiferromagnetic Mn-N compounds such as Mn6N2.58 and Mn3N2, leaving N vacancies. This provides evidence that N vacancies played a critical role in weakening the ferromagnetic property in the Mn-implanted GaN. The photoluminescence peak at 2.92 eV became strong after annealing at 800degreesC, indicating an increase in hole concentration due to an enhanced activation of Mn impurities in p-type GAN. The intensity of Raman modes at 290 and 670 cm(-1), decreased drastically as annealing temperature increased (>800degreesC), due to the reduction in Mn-implantation-induced lattice imperfections. From this, it is proposed that the increase in magnetic properties of Mn-implanted GAN originated from the enhancement in the crystallinity as well as the production of Ga-Mn magnetic phases. (C) 2003 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Microstructural, optical, and magnetic properties of Mn-implanted p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1572974 | - |
dc.author.google | Baik, JM | en_US |
dc.author.google | Lee, JL | en_US |
dc.author.google | Kang, TW | en_US |
dc.author.google | Shon, Y | en_US |
dc.relation.volume | 93 | en_US |
dc.relation.issue | 11 | en_US |
dc.relation.startpage | 9024 | en_US |
dc.relation.lastpage | 9029 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.93, no.11, pp.9024 - 9029 | - |
dc.identifier.wosid | 000183144300030 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 9029 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 9024 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 93 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0038341861 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 15 | - |
dc.description.scptc | 16 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | RAMAN-SCATTERING | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | (GA | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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