DC Field | Value | Language |
---|---|---|
dc.contributor.author | TAOYU, ZOU | - |
dc.contributor.author | Ben Xiang | - |
dc.contributor.author | Yangbing X | - |
dc.contributor.author | Ya Wang | - |
dc.contributor.author | Chuan Liu | - |
dc.contributor.author | Jun Chen | - |
dc.contributor.author | Kai Wang | - |
dc.contributor.author | Qing Dai | - |
dc.contributor.author | NOH, YONG YOUNG | - |
dc.contributor.author | Shengdong Zhang | - |
dc.contributor.author | Hang Zhou | - |
dc.date.accessioned | 2021-06-01T04:05:38Z | - |
dc.date.available | 2021-06-01T04:05:38Z | - |
dc.date.created | 2021-03-05 | - |
dc.date.issued | 2021-01 | - |
dc.identifier.issn | 2168-6734 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/105411 | - |
dc.description.abstract | The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskitebased image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm(-2), and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2 x 10(2)mu C mGy(air)(-1)cm(-3). Theoretically, with a state-of-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as 10 mu Gy(air) s(-1). This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
dc.title | Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/JEDS.2020.3040771 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.96 - 101 | - |
dc.identifier.wosid | 000622098400016 | - |
dc.citation.endPage | 101 | - |
dc.citation.startPage | 96 | - |
dc.citation.title | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
dc.citation.volume | 9 | - |
dc.contributor.affiliatedAuthor | TAOYU, ZOU | - |
dc.contributor.affiliatedAuthor | NOH, YONG YOUNG | - |
dc.identifier.scopusid | 2-s2.0-85101811597 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Flat-panel imager | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | perovskite | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordAuthor | X-ray detectors | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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