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Cited 17 time in webofscience Cited 17 time in scopus
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dc.contributor.authorYi, HJ-
dc.contributor.authorKim, MG-
dc.contributor.authorPark, JH-
dc.contributor.authorJang, HM-
dc.date.accessioned2015-06-25T02:13:11Z-
dc.date.available2015-06-25T02:13:11Z-
dc.date.created2009-02-28-
dc.date.issued2004-11-01-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000004648en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10542-
dc.description.abstractHighly [111]-oriented rhombohedral lead zirconate titanate [Pb(Zr1-xTix)O-3; PZT] thin films were prepared on Pt(111)/Ti/SiO2/Si substrates by suitably combining pulsed laser deposition with sol-gel coating. Two distinctive types of the backscattering geometry were employed for the polarized Raman scattering study: (i) normal backscattering in which the propagation direction of relevant phonons is parallel to the principal [111] polar axis of the rhombohedral 3m (C-3v) point group for observing E(TO) phonons, and (ii) side-view backscattering in which the phonon-propagation direction is normal to the [111] direction for isolating A(1)(TO) phonons. Room-temperature Raman spectra of the [111]-oriented PZT 60/40 film (with Zr/Ti=60/40) having the high-temperature rhombohedral form were examined and compared with those of the [111]-oriented low-temperature rhombohedral PZT 90/10 film which is characterized by the tilting of oxygen octahedra about the principal [111] direction. Similarities and differences in the observed Raman spectra between these two distinctive films were examined in the light of the Raman selection rules for R3m and R3c space groups. (C) 2004 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titlePolarized Raman scattering of highly [111]-oriented Pb(Zr,Ti)O-3 thin films in the rhombohedral-phase field-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.1790573-
dc.author.googleYi, HJen_US
dc.author.googleKim, MGen_US
dc.author.googleJang, HMen_US
dc.author.googlePark, JHen_US
dc.relation.volume96en_US
dc.relation.issue9en_US
dc.relation.startpage5110en_US
dc.relation.lastpage5116en_US
dc.contributor.id10084272en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.96, no.9, pp.5110 - 5116-
dc.identifier.wosid000224799300060-
dc.date.tcdate2019-01-01-
dc.citation.endPage5116-
dc.citation.number9-
dc.citation.startPage5110-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume96-
dc.contributor.affiliatedAuthorJang, HM-
dc.identifier.scopusid2-s2.0-9744242009-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc16-
dc.description.scptc16*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusLEAD-ZIRCONATE-TITANATE-
dc.subject.keywordPlusCERAMICS-
dc.subject.keywordPlusBOUNDARY-
dc.subject.keywordPlusSYSTEM-
dc.subject.keywordPlusCAPACITORS-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordPlusFATIGUE-
dc.subject.keywordPlusOXIDES-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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