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Defect Engineering을 통한 TiN/H0.5Z0.5O2/TiN 커패시터의 Wake-up Effect와 강유전성 개선

Title
Defect Engineering을 통한 TiN/H0.5Z0.5O2/TiN 커패시터의 Wake-up Effect와 강유전성 개선
Authors
HWANG, HYUNSANGKIM, HYUNGWOOKASHIR, ALIREZASEUNYEOL, OH
Date Issued
2021-01-25
Publisher
한국반도체연구조합
URI
https://oasis.postech.ac.kr/handle/2014.oak/105433
Article Type
Conference
Citation
제 28회 한국반도체학술대회, 2021-01-25
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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