DC Field | Value | Language |
---|---|---|
dc.contributor.author | Borse, PH | - |
dc.contributor.author | Yi, JM | - |
dc.contributor.author | Je, JH | - |
dc.contributor.author | Tsai, WL | - |
dc.contributor.author | Hwu, Y | - |
dc.date.accessioned | 2015-06-25T02:13:24Z | - |
dc.date.available | 2015-06-25T02:13:24Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-02-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000003972 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10549 | - |
dc.description.abstract | We investigated the room temperature electroless nickel deposition on glass, induced by synchrotron x ray. By irradiating electrolytes with intense x ray the onset time for Ni reduction disappears at high electrolyte pH (>6.0) in sharp contrast with conventional electroless deposition. The time for Ni reduction in irradiated solution also decreases with increase in electrolyte pH. Consequently higher reduction rates in alkaline solutions (pH>8.0) raise the Ni nucleation density during deposition, as illustrated by homogeneous and complete coverage of the substrate by nanoparticles within a short period of 1 min. The enhancement in reduction rate is attributed to high redox efficiency of hydrated electrons produced by x ray as well as their redox potential enhancements under higher electrolyte pH conditions. (C) 2004 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | pH dependence of synchrotron x-ray induced electroless nickel deposition | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1637724 | - |
dc.author.google | Borse, PH | en_US |
dc.author.google | Yi, JM | en_US |
dc.author.google | Hwu, Y | en_US |
dc.author.google | Tsai, WL | en_US |
dc.author.google | Je, JH | en_US |
dc.relation.volume | 95 | en_US |
dc.relation.issue | 3 | en_US |
dc.relation.startpage | 1166 | en_US |
dc.relation.lastpage | 1170 | en_US |
dc.contributor.id | 10123980 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.95, no.3, pp.1166 - 1170 | - |
dc.identifier.wosid | 000188281800053 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1170 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1166 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 95 | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-1142268131 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 19 | - |
dc.description.scptc | 19 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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