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Cited 17 time in webofscience Cited 18 time in scopus
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dc.contributor.authorLEE, KYUMIN-
dc.contributor.authorLEE, LEEJONGWON-
dc.contributor.authorNIKAM REVANNATH-
dc.contributor.author허성재-
dc.contributor.authorHwang, Hyunsang-
dc.date.accessioned2021-06-01T04:50:30Z-
dc.date.available2021-06-01T04:50:30Z-
dc.date.created2020-09-27-
dc.date.issued2020-11-
dc.identifier.issn0957-4484-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/105532-
dc.description.abstractWe propose an all-solid-state Na ion-based synaptic transistor (NST) to overcome the low retention problem of the Li ion-based synaptic transistor (LST). Through our analysis, it was found that the retention instability in an ionic synaptic transistor originated from its high ionic diffusivity. As confirmed by cyclic voltammetry analysis, Na ions have a lower ionic diffusivity than Li ions in the WO(x)layer. The state retention of NST was found to be improved to 20 times that of LST. Furthermore, near-ideal synaptic behaviors, such as linear weight update and linearI-Vcharacteristics, were also obtained by material engineering.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.relation.isPartOfNANOTECHNOLOGY-
dc.titleSodium-based nano-ionic synaptic transistor with improved retention characteristics-
dc.typeArticle-
dc.identifier.doi10.1088/1361-6528/abaa0e-
dc.type.rimsART-
dc.identifier.bibliographicCitationNANOTECHNOLOGY, v.31, no.45-
dc.identifier.wosid000563349400001-
dc.citation.number45-
dc.citation.titleNANOTECHNOLOGY-
dc.citation.volume31-
dc.contributor.affiliatedAuthorLEE, KYUMIN-
dc.contributor.affiliatedAuthorLEE, LEEJONGWON-
dc.contributor.affiliatedAuthorNIKAM REVANNATH-
dc.contributor.affiliatedAuthor허성재-
dc.contributor.affiliatedAuthorHwang, Hyunsang-
dc.identifier.scopusid2-s2.0-85090077285-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordPlusTUNGSTEN-OXIDE-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordAuthorneuromorphic device-
dc.subject.keywordAuthorNa ion-based synaptic transistor-
dc.subject.keywordAuthorstate retention-
dc.subject.keywordAuthorionic diffusivity-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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