Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective
SCIE
SCOPUS
- Title
- Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective
- Authors
- LEE, SANGMIN; YOO, JONGMYUNG; PARKJAEHYUK; Hwang H.
- Date Issued
- 2020-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- This article proposes a thyristor conduction-insulated gate bipolar transistor (TC-IGBT) with a p-n-p base and an n-p-n collector to reduce turn-off loss. The parasitic p-collector/n-drift/floating p (FP)-layer/carrier stored (CS)-layer thyristor is activated by the double channel gate and the p-n-p base acts a hole barrier to increase hole concentration at the top side. The n-p-n collector is used for extracting electrons from the n-drift region to decrease hole concentration at the bottom side. Therefore, these two effects form linear and descending hole concentration distribution profile. As a result, the p-n-p base and the n-p-n collector in the TC-IGBT offers lower turn-off loss and turn-off fall time. TCAD numerical simulations show reductions up to 47% (3.15 mJ) and 52% (34 ns) in turn-off loss and turn-off fall time, respectively, when compared to a field stop (FS) IGBT with similar breakdown voltage, threshold voltage, and short circuit time. Therefore, this designed structure may be attractive for power electronics applications.
- Keywords
- DIOXIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/105583
- DOI
- 10.1109/TED.2020.2997670
- ISSN
- 0018-9383
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 7, page. 2878 - 2883, 2020-07
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