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Cited 32 time in webofscience Cited 32 time in scopus
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dc.contributor.authorLEE, LEEJONGWON-
dc.contributor.authorNIKAM REVANNATH-
dc.contributor.authorSEOKJAE, LIM-
dc.contributor.authorKWAK, MYOUNG HOON-
dc.contributor.authorHwang, Hyunsang-
dc.date.accessioned2021-06-01T05:05:57Z-
dc.date.available2021-06-01T05:05:57Z-
dc.date.created2020-04-20-
dc.date.issued2020-03-
dc.identifier.issn0957-4484-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/105620-
dc.description.abstractIn this study, we introduce a lithium (Li) ion-based three-terminal (3-T) synapse device using WOx as a channel. Our study reveals a key stoichiometry of WO2.7 for excellent synaptic characteristics that is related to Li-ion diffusivity. The open-lattice structure formed by oxygen deficiency promoted Li-ion injection and diffusion. The optimized stoichiometry and improved Li-ion diffusivity were confirmed by x-ray photoelectron spectroscopy analysis and cyclic voltammetry, respectively. Furthermore, the transient conductance change that inevitably occurs in ion-based synaptic transistors was resolved by applying a two-step voltage pulse scheme. As a result, we achieved a symmetric and linear weight-update characteristic with reduced program/erase operation time.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.relation.isPartOfNANOTECHNOLOGY-
dc.titleExcellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2.7 stoichiometry with high ion diffusivity-
dc.typeArticle-
dc.identifier.doi10.1088/1361-6528/ab793d-
dc.type.rimsART-
dc.identifier.bibliographicCitationNANOTECHNOLOGY, v.31, no.23-
dc.identifier.wosid000522069000001-
dc.citation.number23-
dc.citation.titleNANOTECHNOLOGY-
dc.citation.volume31-
dc.contributor.affiliatedAuthorLEE, LEEJONGWON-
dc.contributor.affiliatedAuthorNIKAM REVANNATH-
dc.contributor.affiliatedAuthorSEOKJAE, LIM-
dc.contributor.affiliatedAuthorKWAK, MYOUNG HOON-
dc.contributor.affiliatedAuthorHwang, Hyunsang-
dc.identifier.scopusid2-s2.0-85082147823-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordPlusTUNGSTEN-OXIDE-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthorLi-ion synapse-
dc.subject.keywordAuthorWOx stoichiometry-
dc.subject.keywordAuthorion diffusivity-
dc.subject.keywordAuthortransient conductance change-
dc.subject.keywordAuthortwo-step voltage pulse scheme-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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