Ferromagnetic GaN : MnAlSi nanowires
SCIE
SCOPUS
- Title
- Ferromagnetic GaN : MnAlSi nanowires
- Authors
- Xu, CK; Chun, J; Rho, K; Kim, DE; Kim, BJ; Yoon, S; Han, SE; Kim, JJ
- Date Issued
- 2006-03-15
- Publisher
- AMER INST PHYSICS
- Abstract
- The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7 at. % is reported. The magnetism measurements show that the Curie temperature is above 350 K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n-type semiconductor.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10586
- DOI
- 10.1063/1.2174125
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 99, no. 6, page. 64312 - 64312, 2006-03-15
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