DC Field | Value | Language |
---|---|---|
dc.contributor.author | BAEK, CHANG KI | - |
dc.contributor.author | KIM, HYANGWOO | - |
dc.contributor.author | MINGEUN, CHOI | - |
dc.contributor.author | KONG, BYOUNG DON | - |
dc.contributor.author | CHO, HYEONSU | - |
dc.date.accessioned | 2021-06-01T08:02:02Z | - |
dc.date.available | 2021-06-01T08:02:02Z | - |
dc.date.created | 2021-01-20 | - |
dc.date.issued | 2020-08-19 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/106058 | - |
dc.description.abstract | 2 terminal thyristor random-access memory (T RAM) is investigated in terms of doping concentrations in the storage region to improve scalability and data retention time. When doping concentrations of N and P storage region are equal to each other at 1018 cm-3, T-RAM exhibits the highest retention time of 100 msec. In addition, it is proposed how to set the standby voltage in an energy-effective way. This standby voltage allows steady data retention of T-RAM with femto-scale leakage current until the erase operation is applied. Consequently, the proposed guideline can give a pathway to realize 2 terminal T-RAM as a promising capacitor-less DRAM technology. | - |
dc.publisher | 대한전자공학회 | - |
dc.relation.isPartOf | 2020 IEIE Summer Conference | - |
dc.relation.isPartOf | 2020 IEIE Summer Conference | - |
dc.title | Analysis of 2-terminal Thyristor-based Random Access Memory (T-RAM) Characteristics for Scaling and Data Retention | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.identifier.bibliographicCitation | 2020 IEIE Summer Conference | - |
dc.citation.conferenceDate | 2020-08-19 | - |
dc.citation.conferencePlace | KO | - |
dc.citation.title | 2020 IEIE Summer Conference | - |
dc.contributor.affiliatedAuthor | BAEK, CHANG KI | - |
dc.contributor.affiliatedAuthor | KIM, HYANGWOO | - |
dc.contributor.affiliatedAuthor | MINGEUN, CHOI | - |
dc.contributor.affiliatedAuthor | KONG, BYOUNG DON | - |
dc.contributor.affiliatedAuthor | CHO, HYEONSU | - |
dc.description.journalClass | 2 | - |
dc.description.journalClass | 2 | - |
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