Open Access System for Information Sharing

Login Library

 

Article
Cited 17 time in webofscience Cited 18 time in scopus
Metadata Downloads
Full metadata record
Files in This Item:
DC FieldValueLanguage
dc.contributor.authorKim, Y-
dc.contributor.authorHan, H-
dc.contributor.authorRodriguez, BJ-
dc.contributor.authorVrejoiu, I-
dc.contributor.authorLee, W-
dc.contributor.authorBaik, S-
dc.contributor.authorHesse, D-
dc.contributor.authorAlexe, M-
dc.date.accessioned2015-06-25T02:15:49Z-
dc.date.available2015-06-25T02:15:49Z-
dc.date.created2010-12-01-
dc.date.issued2010-08-15-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000022116en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10627-
dc.description.abstractWe have investigated the individual switching of nanoscale capacitors by piezoresponse force microscopy. Nanoscale epitaxial ferroelectric capacitors with terabyte per inch square equivalent density were fabricated by the deposition of top electrodes onto a pulsed laser deposited lead zirconate titanate thin film by electron beam evaporation through ultrathin anodic aluminum oxide membrane stencil masks. Using bias pulses, the nanoscale capacitors were uniformly switched and proved to be individually addressable. These film-based nanoscale capacitors might be a feasible alternative for high-density mass storage memory applications with near terabyte per inch square density due to the absence of any cross-talk effects. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474960]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleIndividual switching of film-based nanoscale epitaxial ferroelectric capacitors-
dc.typeArticle-
dc.contributor.college포항공과대학교en_US
dc.identifier.doi10.1063/1.3474960-
dc.author.googleKim, Yen_US
dc.author.googleHan, Hen_US
dc.author.googleAlexe, Men_US
dc.author.googleHesse, Den_US
dc.author.googleBaik, Sen_US
dc.author.googleLee, Wen_US
dc.author.googleVrejoiu, Ien_US
dc.author.googleRodriguez, BJen_US
dc.relation.volume108en_US
dc.relation.issue4en_US
dc.contributor.id10078291en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameConference Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.108, no.4-
dc.identifier.wosid000281857100006-
dc.date.tcdate2019-01-01-
dc.citation.number4-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume108-
dc.contributor.affiliatedAuthorBaik, S-
dc.identifier.scopusid2-s2.0-77956303606-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc14-
dc.description.scptc14*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle; Proceedings Paper-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Views & Downloads

Browse